TPC8119

Type Designator: TPC8119

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1.9 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 40 nC

Rise Time (tr): 8 nS

Drain-Source Capacitance (Cd): 475 pF

Maximum Drain-Source On-State Resistance (Rds): 0.013 Ohm

Package: SOP8