SI2302CDS-T1-GE3 MOSFET

Type Designator: SI2302CDS-T1-GE3

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.25 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V

Maximum Drain Current |Id|: 5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 12 nC

Rise Time (tr): 17 nS

Drain-Source Capacitance (Cd): 105 pF

Maximum Drain-Source On-State Resistance (Rds): 0.028(typ) Ohm

Package: SOT23