SI2301CDS-T1-GE3   SOT-23   2.2A 20V 1.25W 0.13OHM   P-CHANNEL MOSFET

SI2301 MOSFET

Type Designator: SI2301

Marking Code: A1sHB

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1.25 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 0.45 V

Maximum Drain Current |Id|: 2.2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 36 nS

Drain-Source Capacitance (Cd): 223 pF

Maximum Drain-Source On-State Resistance (Rds): 0.13 Ohm

Package: SOT23

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