RU190N08Q

Type Designator: RU190N08Q

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 400 W

Maximum Drain-Source Voltage |Vds|: 80 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 190 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 155 nC

Rise Time (tr): 22 nS

Drain-Source Capacitance (Cd): 1100 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0048 Ohm

Package: TO247

Mikrokomponent ile Tüm Elektronik Parça İhtiyaçlarınızda Güçlü Tedarik, Orijinal Ürün ve Hızlı Teslimat