GT50JR22

Type Designator: GT50JR22

Marking Code: 50JR22

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 230

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 2.2

Maximum Gate-Emitter Voltage |Veg|, V: 25

Maximum Collector Current |Ic|, A: 50

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 180

Package: TO-3PN