GT50J325

Type Designator: GT50J325

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 240

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 2

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 50

Maximum Junction Temperature (Tj), °C: 150

Package: 2-21F2C

Mikrokomponent ile Tüm Elektronik Parça İhtiyaçlarınızda Güçlü Tedarik, Orijinal Ürün ve Hızlı Teslimat