GT50J102

Type Designator: GT50J102

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 200

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 2.7

Maximum Collector Current |Ic|, A: 50

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 300

Package: TO264

Mikrokomponent ile Tüm Elektronik Parça İhtiyaçlarınızda Güçlü Tedarik, Orijinal Ürün ve Hızlı Teslimat