FQPF8N80C TO-220F 8A 800V 1.55Ω 59W N-CHANNEL MOSFET
FQPF8N80C MOSFET
Type Designator: FQPF8N80C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 59 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 8 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 35 nC
Maximum Drain-Source On-State Resistance (Rds): 1.55 Ohm
Package: TO220F
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