FQPF5P20

Type Designator: FQPF5P20

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 38 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 3.4 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 10 nC

Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm

Package: TO220F