FQP34N20 MOSFET

Type Designator: FQP34N20

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 180 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 31 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 60 nC

Maximum Drain-Source On-State Resistance (Rds): 0.075 Ohm

Package: TO220