FQA17N40 MOSFET

Type Designator: FQA17N40

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 190 W

Maximum Drain-Source Voltage |Vds|: 400 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 17.2 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 45 nC

Rise Time (tr): 185 nS

Drain-Source Capacitance (Cd): 270 pF

Maximum Drain-Source On-State Resistance (Rds): 0.27 Ohm

Package: TO-3PN