FMH23N50E

Type Designator: FMH23N50E

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 315 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 23 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 93 nC

Rise Time (tr): 13 nS

Drain-Source Capacitance (Cd): 330 pF

Maximum Drain-Source On-State Resistance (Rds): 0.245 Ohm

Package: TO3P