FDS6675BZ

Type Designator: FDS6675BZ

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 2.5 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 11 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 44 nC

Maximum Drain-Source On-State Resistance (Rds): 0.013 Ohm

Package: SOIC

Mikrokomponent ile Tüm Elektronik Parça İhtiyaçlarınızda Güçlü Tedarik, Orijinal Ürün ve Hızlı Teslimat