FDP8N50NZ MOSFET

Type Designator: FDP8N50NZ

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 130 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 14 nC

Maximum Drain-Source On-State Resistance (Rds): 0.85 Ohm

Package: TO220