FDN5630 MOSFET

Type Designator: FDN5630

Marking Code: 5630

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.5 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 1.7 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 7 nC

Rise Time (tr): 6 nS

Drain-Source Capacitance (Cd): 102 pF

Maximum Drain-Source On-State Resistance (Rds): 0.1 Ohm

Package: SSOT3