FDD8778 TO-252 35A 25V 39W 0.014OHM N-CHANNEL MOSFET
FDD8778 MOSFET
Type Designator: FDD8778
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 39 W
Maximum Drain-Source Voltage |Vds|: 25 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
Maximum Drain Current |Id|: 35 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 12.6 nC
Maximum Drain-Source On-State Resistance (Rds): 0.014 Ohm
Package: TO252 DPAK
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