FDD6685 MOSFET

Type Designator: FDD6685

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 52 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 40 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 17 nC

Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm

Package: TO252 DPAK