AP30G120ASW TO-3P 30A 1200V 208W IGBT TRANSISTOR
AP30G120ASW IGBT
Type Designator: AP30G120ASW
Type of IGBT Channel: N-Channel
Maximum Power Dissipation (Pc), W: 208
Maximum Collector-Emitter Voltage |Vce|, V: 1200
Collector-Emitter saturation Voltage |Vcesat|, V: 3.7
Maximum Gate-Emitter Voltage |Veg|, V: 30
Maximum Collector Current |Ic|, A: 60
Maximum Junction Temperature (Tj), °C: 150
Rise Time, nS: 45
Maximum Collector Capacity (Cc), pF: 120
Mikrokomponent ile Tüm Elektronik Parça İhtiyaçlarınızda Güçlü Tedarik, Orijinal Ürün ve Hızlı Teslimat
