2SK1489

Type Designator: 2SK1489

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 200 W

Maximum Drain-Source Voltage |Vds|: 1000 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V

Maximum Drain Current |Id|: 12 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 110 nC

Rise Time (tr): 100 nS

Drain-Source Capacitance (Cd): 360 pF

Maximum Drain-Source On-State Resistance (Rds): 1 Ohm

Package: TO3P