2SJ601-Z

Type Designator: 2SJ601-Z

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 65 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 36 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 12 nS

Drain-Source Capacitance (Cd): 580 pF

Maximum Drain-Source On-State Resistance (Rds): 0.031 Ohm

Package: TO252

Mikrokomponent ile Tüm Elektronik Parça İhtiyaçlarınızda Güçlü Tedarik, Orijinal Ürün ve Hızlı Teslimat