2SD895

Type Designator: 2SD895

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 60 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 5 MHz

Collector Capacitance (Cc): 110 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: –

Package: TO247