2SD838

Type Designator: 2SD838

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 2500 V

Maximum Collector-Emitter Voltage |Vce|: 900 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 200 °C

Forward Current Transfer Ratio (hFE), MIN: 3

Noise Figure, dB: –

Package: TO3