2SD649

Type Designator: 2SD649

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 1500 V

Maximum Collector-Emitter Voltage |Vce|: 600 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 125 °C

Forward Current Transfer Ratio (hFE), MIN: 4

Noise Figure, dB: –

Package: TO3