2SD2901

Type Designator: 2SD2901

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 60 W

Maximum Collector-Base Voltage |Vcb|: 1600 V

Maximum Collector-Emitter Voltage |Vce|: 900 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 6

Noise Figure, dB: –

Package: TO-3PML