2SD2499

Type Designator: 2SD2499

Material of Transistor: Si

Polarity: NPN

Built in Bias Resistor R2 = 0.04 kOhm

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 1500 V

Maximum Collector-Emitter Voltage |Vce|: 600 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 2 MHz

Collector Capacitance (Cc): 95 pF

Forward Current Transfer Ratio (hFE), MIN: 8

Noise Figure, dB: –

Package: TO3PHIS