2SD200

Type Designator: 2SD200

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 1500 V

Maximum Collector-Emitter Voltage |Vce|: 700 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 2.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 4 MHz

Forward Current Transfer Ratio (hFE), MIN: 2.5

Noise Figure, dB: –

Package: TO3