2SD198

Type Designator: 2SD198

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 25 W

Maximum Collector-Base Voltage |Vcb|: 300 V

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 10 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: –

Package: TO3