2SD1779

Type Designator: 2SD1779

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 1500

Noise Figure, dB: –

Package: SOT33