2SC930

Type Designator: 2SC930

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.12 W

Maximum Collector-Base Voltage |Vcb|: 15 V

Maximum Collector-Emitter Voltage |Vce|: 10 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.03 A

Max. Operating Junction Temperature (Tj): 125 °C

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 3.5 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: –

Package: R145