2SC900

Type Designator: 2SC900

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.25 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.02 A

Max. Operating Junction Temperature (Tj): 125 °C

Transition Frequency (ft): 75 MHz

Forward Current Transfer Ratio (hFE), MIN: 250

Noise Figure, dB: –

Package: TO92