2SC5706

Type Designator: 2SC5706

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 15 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 400 MHz

Collector Capacitance (Cc): 15 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: –

Package: TO252