2SC4387

Type Designator: 2SC4387

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 200 V

Maximum Collector-Emitter Voltage |Vce|: 140 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 125 °C

Transition Frequency (ft): 20 MHz

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: –

Package: TO218