2SA965

Type Designator: 2SA965

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.9 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 125 °C

Transition Frequency (ft): 120 MHz

Collector Capacitance (Cc): 40 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: –

Package: TO92