2SA1120

Type Designator: 2SA1120

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 35 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 125 °C

Transition Frequency (ft): 170 MHz

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: –

Package: TO126