2N65 TO252

Type Designator: 2N65-TO252

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 60 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 2 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 15(max) nC

Rise Time (tr): 20 nS

Drain-Source Capacitance (Cd): 40 pF

Maximum Drain-Source On-State Resistance (Rds): 3.8(typ) Ohm

Package: TO252