2N3110 Datasheet

Type Designator: 2N3110

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 190 °C

Transition Frequency (ft): 60 MHz

Collector Capacitance (Cc): 25 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: –

Package: TO5

Mikrokomponent ile Tüm Elektronik Parça İhtiyaçlarınızda Güçlü Tedarik, Orijinal Ürün ve Hızlı Teslimat