HGTP12N60C3D IGBT

Type Designator: HGTP12N60C3D

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 104

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 1.65

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 24

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 28

Package: TO220AB