BC639-16

Type Designator: BC639-16

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 7 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: –

Package: TO-92