FQP10N50CF MOSFET

Type Designator: FQP10N50CF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 143 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 43 nC

Rise Time (tr): 80 nS

Drain-Source Capacitance (Cd): 177 pF

Maximum Drain-Source On-State Resistance (Rds): 0.61 Ohm

Package: TO220