FQP27P06 MOSFET

Type Designator: FQP27P06

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 120 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 27 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 33 nC

Maximum Drain-Source On-State Resistance (Rds): 0.07 Ohm

Package: TO220