TK10A80E MOSFET. Datasheet pdf. Equivalent

Type Designator: TK10A80E

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 46 nC

Rise Time (tr): 40 nS

Drain-Source Capacitance (Cd): 150 pF

Maximum Drain-Source On-State Resistance (Rds): 1 Ohm

Package: TO-220SIS

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