2SD2560

Type Designator: 2SD2560

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 130 W

Maximum Collector-Base Voltage |Vcb|: 150 V

Maximum Collector-Emitter Voltage |Vce|: 150 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 70 MHz

Forward Current Transfer Ratio (hFE), MIN: 5000

Noise Figure, dB: –

Package: TO3P