2SB1168

Type Designator: 2SB1168

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 130 MHz

Collector Capacitance (Cc): 65 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: –

Package: TO126