FQD30N06

Type Designator: FQD30N06TM

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 44 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 22.7 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 19 nC

Rise Time (tr): 85 nS

Drain-Source Capacitance (Cd): 270 pF

Maximum Drain-Source On-State Resistance (Rds): 0.045 Ohm

Package: D-PAK

Mikrokomponent ile Tüm Elektronik Parça İhtiyaçlarınızda Güçlü Tedarik, Orijinal Ürün ve Hızlı Teslimat