2SD1111

Type Designator: 2SD1111

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.7 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 7 MHz

Collector Capacitance (Cc): 190 pF

Forward Current Transfer Ratio (hFE), MIN: 7000

Noise Figure, dB: –

Package: TO92