2SK2601

Type Designator: 2SK2601

Marking Code: K2601

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 30 nC

Rise Time (tr): 30 nS

Drain-Source Capacitance (Cd): 550 pF

Maximum Drain-Source On-State Resistance (Rds): 1 Ohm

Package: SC65 TO3P