2SD1409

Type Designator: 2SD1409

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 25 W

Maximum Collector-Base Voltage |Vcb|: 600 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 150 °C

Collector Capacitance (Cc): 35 pF

Forward Current Transfer Ratio (hFE), MIN: 600

Noise Figure, dB: –

Package: ISO220