2SC5570

Type Designator: 2SC5570

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 220 W

Maximum Collector-Base Voltage |Vcb|: 1700 V

Maximum Collector-Emitter Voltage |Vce|: 800 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 28 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 2 MHz

Collector Capacitance (Cc): 470 pF

Forward Current Transfer Ratio (hFE), MIN: 4.5

Noise Figure, dB: –

Package: 2-21F2A

Mikrokomponent ile Tüm Elektronik Parça İhtiyaçlarınızda Güçlü Tedarik, Orijinal Ürün ve Hızlı Teslimat