S2000

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 125 W

Maximum Collector-Emitter Voltage |Vce|: 1500 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 3 MHz

Collector Capacitance (Cc): 125 pF

Forward Current Transfer Ratio (hFE), MIN: 2.2

Noise Figure, dB: –

Package: TO247