SMK0825

Type Designator: SMK0825F

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 29 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 85 nS

Drain-Source Capacitance (Cd): 141 pF

Maximum Drain-Source On-State Resistance (Rds): 0.43 Ohm

Package: TO-220F